高温成形气体退火对HfO/ sub2 / MOSFET性能的影响

2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303) Pub Date : 2002-06-11 DOI:10.1109/VLSIT.2002.1015372

K. Onishi, C. Kang, R. Choi, Hag-ju Cho, S. Gopalan, R. Nieh, S. Krishnan, J.C. Lee

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引用次数: 19

摘要

研究了成形气(FG)退火对HfO/ sub2 / MOSFET性能的影响。高温(500-600/spl℃)FG退火已被证明可以显著改善N和pmosfet的载流子迁移率和亚阈值斜率。这种改善与界面态密度的降低有关。在HfO/ sub2 /沉积之前，用NH/ sub3 /或NO退火进行表面制备的样品也检验了FG退火的有效性。结果表明，FG退火并没有降低PMOS负偏置温度的不稳定性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Effects of high-temperature forming gas anneal on HfO/sub 2/ MOSFET performance

Effects of forming gas (FG) annealing on HfO/sub 2/ MOSFET performance have been studied. High-temperature (500-600/spl deg/C) FG annealing has been shown to significantly improve carrier mobility and subthreshold slopes for both N and PMOSFETs. The improvement has been correlated to the reduction in interfacial state density. The effectiveness of FG annealing has also been examined on samples that underwent surface preparations with NH/sub 3/ or NO annealing prior to HfO/sub 2/ deposition. It was found that FG annealing did not degrade PMOS negative bias temperature instability characteristics.

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2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303)

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