基于新型Ga-Sb-Ge材料的新型快速开关和高数据保留相变存储器

2015 IEEE International Electron Devices Meeting (IEDM) Pub Date : 2015-12-01 DOI:10.1109/IEDM.2015.7409620

H. Cheng, W. Chien, M. BrightSky, Y. Ho, Y. Zhu, A. Ray, R. Bruce, W. Kim, C. Yeh, H. Lung, C. Lam

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引用次数: 35

摘要

到目前为止，提高保留的尝试必须牺牲切换速度。本工作探索了基于伪二元GaSb-Ge体系的新型相变材料。由此产生的新型相变材料具有80 ns的快速开关速度，1G循环的长续航时间和250°C-300小时的优异数据保留性能。10年-220°C的数据保存是有史以来最好的。它也是最快通过嵌入式汽车应用焊料粘合标准的材料。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Novel fast-switching and high-data retention phase-change memory based on new Ga-Sb-Ge material

Attempts to improve the retention so far must sacrifice switching speed. This work explores new phase change material based on pseudobinary GaSb-Ge system. The resulting new phase-change material has demonstrated fast switching speed of 80 ns, long endurance of 1G cycles and excellent data retention that survives 250°C-300 hrs. The 10 years-220°C data retention is the best ever reported. It is also the fastest material that can pass the solder bonding criteria for embedded automotive applications.

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2015 IEEE International Electron Devices Meeting (IEDM)

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