I. Adesida, K. Nummila, M. Tong, C. Caneau, R. Bhat
{"title":"高性能0.15 /spl mu/m栅极长度omvppe生长InAlAs/InGaAs modfet","authors":"I. Adesida, K. Nummila, M. Tong, C. Caneau, R. Bhat","doi":"10.1109/ICIPRM.1993.380598","DOIUrl":null,"url":null,"abstract":"The DC and microwave performance of modulation-doped field effect transistors (MODFETs) with 0.15 /spl mu/m T-gates fabricated in a organo-metallic vapor phase epitaxy (OMVPE)-grown lattice-matched InAlAs/InGaAs/InP heterostructure are reported. Devices with extrinsic transconductance, g/sub m/, as high as 1080 mS/mm at 508 mA/mm and a unity current-gain cutoff frequency, f/sub T/, of 187 GHz are shown. To date, this is the highest f/sub T/ reported for OMVPE-grown MODFETs.<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"11 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"High-performance 0.15 /spl mu/m-gatelength OMVPE-grown InAlAs/InGaAs MODFETs\",\"authors\":\"I. Adesida, K. Nummila, M. Tong, C. Caneau, R. Bhat\",\"doi\":\"10.1109/ICIPRM.1993.380598\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The DC and microwave performance of modulation-doped field effect transistors (MODFETs) with 0.15 /spl mu/m T-gates fabricated in a organo-metallic vapor phase epitaxy (OMVPE)-grown lattice-matched InAlAs/InGaAs/InP heterostructure are reported. Devices with extrinsic transconductance, g/sub m/, as high as 1080 mS/mm at 508 mA/mm and a unity current-gain cutoff frequency, f/sub T/, of 187 GHz are shown. To date, this is the highest f/sub T/ reported for OMVPE-grown MODFETs.<<ETX>>\",\"PeriodicalId\":186256,\"journal\":{\"name\":\"1993 (5th) International Conference on Indium Phosphide and Related Materials\",\"volume\":\"11 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1993-04-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1993 (5th) International Conference on Indium Phosphide and Related Materials\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.1993.380598\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1993 (5th) International Conference on Indium Phosphide and Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1993.380598","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The DC and microwave performance of modulation-doped field effect transistors (MODFETs) with 0.15 /spl mu/m T-gates fabricated in a organo-metallic vapor phase epitaxy (OMVPE)-grown lattice-matched InAlAs/InGaAs/InP heterostructure are reported. Devices with extrinsic transconductance, g/sub m/, as high as 1080 mS/mm at 508 mA/mm and a unity current-gain cutoff frequency, f/sub T/, of 187 GHz are shown. To date, this is the highest f/sub T/ reported for OMVPE-grown MODFETs.<>
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