极薄体绝缘子上锗(GOI) p- mosfet载流子输运特性的实验研究

2015 IEEE International Electron Devices Meeting (IEDM) Pub Date : 2015-12-01 DOI:10.1109/IEDM.2015.7409611

Xiao Yu, Jian Kang, M. Takenaka, S. Takagi

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引用次数: 30

摘要

在本文中，我们成功地展示了高质量的极薄体(ETB)绝缘体上锗(GOI) p- mosfet，厚度范围为25 nm至2 nm。此外，本文还首次从散射机制的角度系统地分析和理解了在低至2 nm的大范围GOI厚度范围内的空穴迁移率和GOI厚度的依赖关系。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Experimental study on carrier transport properties in extremely-thin body Ge-on-insulator (GOI) p-MOSFETs with GOI thickness down to 2 nm

In this paper, we have successfully demonstrated high quality Extremely-thin body (ETB) Ge-on-insulator (GOI) p-MOSFETs with thickness ranging from 25 nm to 2 nm. Furthermore, the hole mobility and the GOI thickness dependence over a wide range of GOI thickness down to 2 nm are systematically analyzed and understood from the viewpoint of the scattering mechanisms, for the first time.

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2015 IEEE International Electron Devices Meeting (IEDM)

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