光刻引起的扩散电阻系统失配

Proceedings of the 2002 International Conference on Microelectronic Test Structures, 2002. ICMTS 2002. Pub Date : 2002-04-08 DOI:10.1109/ICMTS.2002.1193204

S. Hausser, S. Majoni, H. Schligtenhorst, G. Kolwe

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引用次数: 5

摘要

在0.35/spl mu/m CMOS工艺的鉴定过程中，观察到扩散电阻在晶圆上的位置不同，呈现出系统性的不匹配。这种不匹配从晶圆中心向外围区域增加。各种实验表明，这种不匹配是由于在抗蚀剂显影过程中旋转晶圆造成的。改变这一过程消除了系统扩散电阻失配。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Systematic mismatch in diffusion resistors caused by photolithography

During the qualification of a 0.35/spl mu/m CMOS process, it was observed that diffusion resistors showed a systematic mismatch, depending on the position on the wafer. The mismatch increased from the center of the wafer to the outer regions. Various experiments showed that the mismatch was caused by spinning the wafer during the resist development process. Changing this process eliminated the systematic diffusion resistor mismatch.

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Proceedings of the 2002 International Conference on Microelectronic Test Structures, 2002. ICMTS 2002.

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