{"title":"GSMBE半绝缘InP:Fe:最佳生长条件","authors":"S. Salaun, A. Le Corre, M. Gauneau, D. Lecrosnier","doi":"10.1109/ICIPRM.1993.380688","DOIUrl":null,"url":null,"abstract":"The authors studied the quality of gas source molecular beam epitaxy (GSMBE) InP:Fe epitaxial layers as a function of growth conditions using secondary ion mass spectroscopy and resistivity measurements. Varying the growth temperature and the phosphine (PH/sub 3/) flow rate allows control of the atom surface mobility during growth, hence permitting decrease of the interactions between iron atoms, to improve their incorporation in the InP layers. For optimized growth conditions, a semi-insulating behavior of GSMBE InP:Fe epitaxial layers is demonstrated with resistivities in excess of 10/sup 8/ /spl Omega/.cm for an iron concentration above 10/sup 17/ cm/sup -3/.<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"42 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Semi-insulating InP:Fe by GSMBE: Optimal growth conditions\",\"authors\":\"S. Salaun, A. Le Corre, M. Gauneau, D. Lecrosnier\",\"doi\":\"10.1109/ICIPRM.1993.380688\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The authors studied the quality of gas source molecular beam epitaxy (GSMBE) InP:Fe epitaxial layers as a function of growth conditions using secondary ion mass spectroscopy and resistivity measurements. Varying the growth temperature and the phosphine (PH/sub 3/) flow rate allows control of the atom surface mobility during growth, hence permitting decrease of the interactions between iron atoms, to improve their incorporation in the InP layers. For optimized growth conditions, a semi-insulating behavior of GSMBE InP:Fe epitaxial layers is demonstrated with resistivities in excess of 10/sup 8/ /spl Omega/.cm for an iron concentration above 10/sup 17/ cm/sup -3/.<<ETX>>\",\"PeriodicalId\":186256,\"journal\":{\"name\":\"1993 (5th) International Conference on Indium Phosphide and Related Materials\",\"volume\":\"42 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1993-04-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1993 (5th) International Conference on Indium Phosphide and Related Materials\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.1993.380688\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1993 (5th) International Conference on Indium Phosphide and Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1993.380688","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Semi-insulating InP:Fe by GSMBE: Optimal growth conditions
The authors studied the quality of gas source molecular beam epitaxy (GSMBE) InP:Fe epitaxial layers as a function of growth conditions using secondary ion mass spectroscopy and resistivity measurements. Varying the growth temperature and the phosphine (PH/sub 3/) flow rate allows control of the atom surface mobility during growth, hence permitting decrease of the interactions between iron atoms, to improve their incorporation in the InP layers. For optimized growth conditions, a semi-insulating behavior of GSMBE InP:Fe epitaxial layers is demonstrated with resistivities in excess of 10/sup 8/ /spl Omega/.cm for an iron concentration above 10/sup 17/ cm/sup -3/.<>
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