超薄ZrO/sub 2/和ZrO/sub x/N/sub y/栅极介质在TaN或多门控NMOSCAP和NMOSFET器件中的比较

2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303) Pub Date : 2002-06-11 DOI:10.1109/VLSIT.2002.1015445

R. Nieh, S. Krishnan, Hag-ju Cho, C. Kang, S. Gopalan, K. Onishi, R. Choi, J.C. Lee

{"title":"超薄ZrO/sub 2/和ZrO/sub x/N/sub y/栅极介质在TaN或多门控NMOSCAP和NMOSFET器件中的比较","authors":"R. Nieh, S. Krishnan, Hag-ju Cho, C. Kang, S. Gopalan, K. Onishi, R. Choi, J.C. Lee","doi":"10.1109/VLSIT.2002.1015445","DOIUrl":null,"url":null,"abstract":"Both NMOSCAP and self-aligned NMOSFET devices using TaN gates were fabricated and characterized in order to compare ZrO/sub 2/ and nitrogen-incorporated ZrO/sub 2/ (ZrO/sub x/N/sub y/) gate dielectrics (EOT/spl sim/10.3/spl Aring/). ZrO/sub x/N/sub y/ devices demonstrated excellent thermal stability, comparable leakage current, higher breakdown field, decreased subthreshold swing, and improved drive current over ZrO/sub x/ devices. Polysilicon-gated NMOSCAPs were also fabricated to investigate the compatibility of ZrO/sub x/N/sub y/ with the poly process (EOT/spl sim/19/spl Aring/), but high leakage and TEM analysis revealed interaction between the poly and ZrO/sub x/N/sub y/.","PeriodicalId":103040,"journal":{"name":"2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-06-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"18","resultStr":"{\"title\":\"Comparison between ultra-thin ZrO/sub 2/ and ZrO/sub x/N/sub y/ gate dielectrics in TaN or poly-gated NMOSCAP and NMOSFET devices\",\"authors\":\"R. Nieh, S. Krishnan, Hag-ju Cho, C. Kang, S. Gopalan, K. Onishi, R. Choi, J.C. Lee\",\"doi\":\"10.1109/VLSIT.2002.1015445\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Both NMOSCAP and self-aligned NMOSFET devices using TaN gates were fabricated and characterized in order to compare ZrO/sub 2/ and nitrogen-incorporated ZrO/sub 2/ (ZrO/sub x/N/sub y/) gate dielectrics (EOT/spl sim/10.3/spl Aring/). ZrO/sub x/N/sub y/ devices demonstrated excellent thermal stability, comparable leakage current, higher breakdown field, decreased subthreshold swing, and improved drive current over ZrO/sub x/ devices. Polysilicon-gated NMOSCAPs were also fabricated to investigate the compatibility of ZrO/sub x/N/sub y/ with the poly process (EOT/spl sim/19/spl Aring/), but high leakage and TEM analysis revealed interaction between the poly and ZrO/sub x/N/sub y/.\",\"PeriodicalId\":103040,\"journal\":{\"name\":\"2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303)\",\"volume\":\"16 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-06-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"18\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VLSIT.2002.1015445\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIT.2002.1015445","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 18

摘要

为了比较ZrO/sub 2/ (ZrO/sub x/N/sub y/)栅极介质(EOT/spl sim/10.3/spl Aring/)，制备了NMOSCAP和自对准NMOSFET器件，并对其进行了表征。与ZrO/sub x/器件相比，ZrO/sub x/N/sub y/器件表现出优异的热稳定性、相当的泄漏电流、更高的击穿场、更小的亚阈值摆幅和更高的驱动电流。制备了多晶硅门控的NMOSCAPs，以研究ZrO/sub x/N/sub y/与聚过程(EOT/spl sim/19/spl Aring/)的相容性，但高泄漏和TEM分析表明，聚与ZrO/sub x/N/sub y/之间存在相互作用。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文

微信好友朋友圈 QQ好友复制链接

本刊更多论文

Comparison between ultra-thin ZrO/sub 2/ and ZrO/sub x/N/sub y/ gate dielectrics in TaN or poly-gated NMOSCAP and NMOSFET devices

Both NMOSCAP and self-aligned NMOSFET devices using TaN gates were fabricated and characterized in order to compare ZrO/sub 2/ and nitrogen-incorporated ZrO/sub 2/ (ZrO/sub x/N/sub y/) gate dielectrics (EOT/spl sim/10.3/spl Aring/). ZrO/sub x/N/sub y/ devices demonstrated excellent thermal stability, comparable leakage current, higher breakdown field, decreased subthreshold swing, and improved drive current over ZrO/sub x/ devices. Polysilicon-gated NMOSCAPs were also fabricated to investigate the compatibility of ZrO/sub x/N/sub y/ with the poly process (EOT/spl sim/19/spl Aring/), but high leakage and TEM analysis revealed interaction between the poly and ZrO/sub x/N/sub y/.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303)

自引率

0.00%

发文量