反应离子蚀刻HEMT栅极凹槽的电导瞬态特性

Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 1994-03-27 DOI:10.1109/ICIPRM.1994.328189

J. Schramm, M. Mondry, E. Hu, J. Merz

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引用次数: 0

摘要

设计了一种简单的新技术来检测RIE自偏置电压、等离子体暴露时间和氧等离子体清洁条件对inp基HEMT的AlInAs Schottky接触层的影响。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Conductance transient characterization of reactive ion etched HEMT gate recesses

A simple, novel technique was devised to examine the effects of RIE self-bias voltage, plasma exposure time, and oxygen plasma clean conditions on the AlInAs Schottky contact layer of an InP-based HEMT.<>

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Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)

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