{"title":"InGaAs/InP半导体二极管激光器的可靠性","authors":"D. Wilt","doi":"10.1109/ICIPRM.1994.328225","DOIUrl":null,"url":null,"abstract":"The reliability of InGaAs/InP semiconductor lasers at typical use conditions is extremely high. This has led to their successful deployment in applications ranging from terrestrial long-haul communication links (MTTF/spl ges/25 years) to transoceanic submarine cable systems (MTTF/spl ges/300 years). At the same time, extremely long service lifetimes and high system reliability requirements make the quantification of device reliability an inexact science, since the period for study must of necessity be a small fraction of the desired system life.<<ETX>>","PeriodicalId":161711,"journal":{"name":"Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1994-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Reliability of InGaAs/InP semiconductor diode lasers\",\"authors\":\"D. Wilt\",\"doi\":\"10.1109/ICIPRM.1994.328225\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The reliability of InGaAs/InP semiconductor lasers at typical use conditions is extremely high. This has led to their successful deployment in applications ranging from terrestrial long-haul communication links (MTTF/spl ges/25 years) to transoceanic submarine cable systems (MTTF/spl ges/300 years). At the same time, extremely long service lifetimes and high system reliability requirements make the quantification of device reliability an inexact science, since the period for study must of necessity be a small fraction of the desired system life.<<ETX>>\",\"PeriodicalId\":161711,\"journal\":{\"name\":\"Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)\",\"volume\":\"7 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1994-03-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.1994.328225\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1994.328225","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Reliability of InGaAs/InP semiconductor diode lasers
The reliability of InGaAs/InP semiconductor lasers at typical use conditions is extremely high. This has led to their successful deployment in applications ranging from terrestrial long-haul communication links (MTTF/spl ges/25 years) to transoceanic submarine cable systems (MTTF/spl ges/300 years). At the same time, extremely long service lifetimes and high system reliability requirements make the quantification of device reliability an inexact science, since the period for study must of necessity be a small fraction of the desired system life.<>
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