R. Schnabel, F. Heinrichsdorff, A. Krost, M. Grundmann, T. Wolf, K. Schatke, D. Bimberg, M. Pilatzek, P. Harde
{"title":"生长在Si上的半绝缘InP:Fe","authors":"R. Schnabel, F. Heinrichsdorff, A. Krost, M. Grundmann, T. Wolf, K. Schatke, D. Bimberg, M. Pilatzek, P. Harde","doi":"10.1109/ICIPRM.1993.380696","DOIUrl":null,"url":null,"abstract":"Metal organic chemical vapor deposition of undoped and Fe-doped InP on vicinal Si[001] and Si(111) is reported. Semi-insulating InP on Si(111) with a resistivity of 3 /spl times/ 10/sup 7/ /spl Omega/cm has been made for the first time. The resistivity increases with decreasing defect density in the InP:Fe epitaxial layers. In InP/Si(111), a considerable reduction of crystal defects by one order of magnitude was found as compared to InP/Si[001]. In consequence, the undesired defect induced effects of strong Si incorporation and incorporation of electrically inactive Fe are almost suppressed.<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"18 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Semi-insulating InP:Fe grown on Si\",\"authors\":\"R. Schnabel, F. Heinrichsdorff, A. Krost, M. Grundmann, T. Wolf, K. Schatke, D. Bimberg, M. Pilatzek, P. Harde\",\"doi\":\"10.1109/ICIPRM.1993.380696\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Metal organic chemical vapor deposition of undoped and Fe-doped InP on vicinal Si[001] and Si(111) is reported. Semi-insulating InP on Si(111) with a resistivity of 3 /spl times/ 10/sup 7/ /spl Omega/cm has been made for the first time. The resistivity increases with decreasing defect density in the InP:Fe epitaxial layers. In InP/Si(111), a considerable reduction of crystal defects by one order of magnitude was found as compared to InP/Si[001]. In consequence, the undesired defect induced effects of strong Si incorporation and incorporation of electrically inactive Fe are almost suppressed.<<ETX>>\",\"PeriodicalId\":186256,\"journal\":{\"name\":\"1993 (5th) International Conference on Indium Phosphide and Related Materials\",\"volume\":\"18 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1993-04-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1993 (5th) International Conference on Indium Phosphide and Related Materials\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.1993.380696\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1993 (5th) International Conference on Indium Phosphide and Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1993.380696","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Metal organic chemical vapor deposition of undoped and Fe-doped InP on vicinal Si[001] and Si(111) is reported. Semi-insulating InP on Si(111) with a resistivity of 3 /spl times/ 10/sup 7/ /spl Omega/cm has been made for the first time. The resistivity increases with decreasing defect density in the InP:Fe epitaxial layers. In InP/Si(111), a considerable reduction of crystal defects by one order of magnitude was found as compared to InP/Si[001]. In consequence, the undesired defect induced effects of strong Si incorporation and incorporation of electrically inactive Fe are almost suppressed.<>
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