H. Dinges, H. Burkhard, R. Losch, H. Nickel, W. Schlapp
{"title":"In/sub 0.53/Al/sub 0.16/Ga/sub 0.31/As和In/sub 0.53/Al/sub 0.21/层在InP上280 ~ 1900 nm波长范围内折射率和界面的测定","authors":"H. Dinges, H. Burkhard, R. Losch, H. Nickel, W. Schlapp","doi":"10.1109/ICIPRM.1993.380555","DOIUrl":null,"url":null,"abstract":"The refractive indices of In/sub 0.53/Al/sub 0.16/Ga/sub 0.31/As and In/sub 0.53/Al/sub 0.21/Ga/sub 0.26/As/InP were measured for the first time in the wavelength range from 280 to 1900 nm by spectroscopic ellipsometry. The results on InP and GaAs are in good agreement with the measurements in the literature. The interface layer due to the exchange of phosphorus and arsenic atoms during the desorption procedure of the molecular beam epitaxy growth exists and was also found by high resolution X-ray diffraction.<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"66 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Determination of the refractive indices and interfaces of In/sub 0.53/Al/sub 0.16/Ga/sub 0.31/As and In/sub 0.53/Al/sub 0.21/ layers on InP in the wavelength range from 280 to 1900 nm\",\"authors\":\"H. Dinges, H. Burkhard, R. Losch, H. Nickel, W. Schlapp\",\"doi\":\"10.1109/ICIPRM.1993.380555\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The refractive indices of In/sub 0.53/Al/sub 0.16/Ga/sub 0.31/As and In/sub 0.53/Al/sub 0.21/Ga/sub 0.26/As/InP were measured for the first time in the wavelength range from 280 to 1900 nm by spectroscopic ellipsometry. The results on InP and GaAs are in good agreement with the measurements in the literature. The interface layer due to the exchange of phosphorus and arsenic atoms during the desorption procedure of the molecular beam epitaxy growth exists and was also found by high resolution X-ray diffraction.<<ETX>>\",\"PeriodicalId\":186256,\"journal\":{\"name\":\"1993 (5th) International Conference on Indium Phosphide and Related Materials\",\"volume\":\"66 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1993-04-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1993 (5th) International Conference on Indium Phosphide and Related Materials\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.1993.380555\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1993 (5th) International Conference on Indium Phosphide and Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1993.380555","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Determination of the refractive indices and interfaces of In/sub 0.53/Al/sub 0.16/Ga/sub 0.31/As and In/sub 0.53/Al/sub 0.21/ layers on InP in the wavelength range from 280 to 1900 nm
The refractive indices of In/sub 0.53/Al/sub 0.16/Ga/sub 0.31/As and In/sub 0.53/Al/sub 0.21/Ga/sub 0.26/As/InP were measured for the first time in the wavelength range from 280 to 1900 nm by spectroscopic ellipsometry. The results on InP and GaAs are in good agreement with the measurements in the literature. The interface layer due to the exchange of phosphorus and arsenic atoms during the desorption procedure of the molecular beam epitaxy growth exists and was also found by high resolution X-ray diffraction.<>
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