{"title":"InP基碳掺杂基HBT技术:最新进展及电路应用","authors":"J. Song, B.W.-P. Hong, C. Palmstrøm, K.B. Chough","doi":"10.1109/ICIPRM.1994.328284","DOIUrl":null,"url":null,"abstract":"Recent advances of carbon-doped InP/In/sub 0.53/Ga/sub 0.47/As singleand double-heterojunction bipolar transistor (SHBT and DHBT) technology, are reviewed. Chemical beam epitaxy (CBE) has been utilized to grow the device structures. Up to date, the SHBT having two 1.5 /spl mu/m/spl times/10 /spl mu/m emitter fingers has exhibited f/sub T/ and f/sub max(MAG/) of 186 GHz and 90 GHz, respectively. To our knowledge, the f/sub T/ of this device is the highest of any type of bipolar transistors yet reported. CW output power of 0.4 W (3.5 W/mm) with power-added efficiency of 36% has been achieved with the 12-finger DHBTs. The SMBT technology has been applied to realization of wideband amplifiers. A simple directly-coupled amplifier has shown a 3-dB bandwidth of over 20 GHz. The results indicate the great potential of carbon-doped base InP/InGaAs HBTs for high-speed and microwave applications.<<ETX>>","PeriodicalId":161711,"journal":{"name":"Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"56 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1994-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"12","resultStr":"{\"title\":\"InP based carbon-doped base HBT technology: its recent advances and circuit applications\",\"authors\":\"J. Song, B.W.-P. Hong, C. Palmstrøm, K.B. Chough\",\"doi\":\"10.1109/ICIPRM.1994.328284\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Recent advances of carbon-doped InP/In/sub 0.53/Ga/sub 0.47/As singleand double-heterojunction bipolar transistor (SHBT and DHBT) technology, are reviewed. Chemical beam epitaxy (CBE) has been utilized to grow the device structures. Up to date, the SHBT having two 1.5 /spl mu/m/spl times/10 /spl mu/m emitter fingers has exhibited f/sub T/ and f/sub max(MAG/) of 186 GHz and 90 GHz, respectively. To our knowledge, the f/sub T/ of this device is the highest of any type of bipolar transistors yet reported. CW output power of 0.4 W (3.5 W/mm) with power-added efficiency of 36% has been achieved with the 12-finger DHBTs. The SMBT technology has been applied to realization of wideband amplifiers. A simple directly-coupled amplifier has shown a 3-dB bandwidth of over 20 GHz. The results indicate the great potential of carbon-doped base InP/InGaAs HBTs for high-speed and microwave applications.<<ETX>>\",\"PeriodicalId\":161711,\"journal\":{\"name\":\"Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)\",\"volume\":\"56 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1994-03-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"12\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.1994.328284\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1994.328284","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
InP based carbon-doped base HBT technology: its recent advances and circuit applications
Recent advances of carbon-doped InP/In/sub 0.53/Ga/sub 0.47/As singleand double-heterojunction bipolar transistor (SHBT and DHBT) technology, are reviewed. Chemical beam epitaxy (CBE) has been utilized to grow the device structures. Up to date, the SHBT having two 1.5 /spl mu/m/spl times/10 /spl mu/m emitter fingers has exhibited f/sub T/ and f/sub max(MAG/) of 186 GHz and 90 GHz, respectively. To our knowledge, the f/sub T/ of this device is the highest of any type of bipolar transistors yet reported. CW output power of 0.4 W (3.5 W/mm) with power-added efficiency of 36% has been achieved with the 12-finger DHBTs. The SMBT technology has been applied to realization of wideband amplifiers. A simple directly-coupled amplifier has shown a 3-dB bandwidth of over 20 GHz. The results indicate the great potential of carbon-doped base InP/InGaAs HBTs for high-speed and microwave applications.<>
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