PVD和CVD TiN在HfO2上作为FDSOI cmosfet的金属栅极堆栈的比较可扩展性，栅极长度和宽度可达25nm

2006 International Electron Devices Meeting Pub Date : 2006-12-01 DOI:10.1109/IEDM.2006.346865

F. Andrieu, O. Faynot, X. Garros, D. Lafond, C. Buj-Dufournet, L. Tosti, S. Minoret, V. Vidal, J. Barbe, F. Allain, E. Rouchouze, L. Vandroux, V. Cosnier, M. Cassé, V. Delaye, C. Carabasse, M. Burdin, G. Rolland, B. Guillaumot, J. Colonna, P. Besson, L. Brevard, D. Mariolle, P. Holliger, A. Vandooren, C. Fenouillet-Béranger, F. Martin, S. Deleonibus

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引用次数: 28

摘要

本文首次比较了物理和化学气相沉积(PVD和CVD) TiN在HfO2上作为FDSOI cmosfet栅极堆栈的可扩展性，栅极长度和宽度降至25nm。结果表明，材料的固有特性和器件的结构对栅极堆的最终特性都有很大的影响。由于材料、电气数据和机械模拟，报告并解释了35nm以下尺度的可靠性问题、应力和栅极控制。尽管PVD-TiN在大尺寸器件上的性能较低，但它表现出了更好的整体权衡，在25nm短窄器件上的离子性能提高了17%

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Comparative Scalability of PVD and CVD TiN on HfO2 as a Metal Gate Stack for FDSOI cMOSFETs down to 25nm Gate Length and Width

This paper compares, for the first time, the scalability of physical- and chemical-vapor-deposited (PVD and CVD) TiN on HfO2 as a gate stack for FDSOI cMOSFETs down to 25nm gate length and width. It is shown that not only the intrinsic material properties but also the device architecture strongly influences the final gate stack properties. Reliability issues, stress and gate control in the sub-35nm scale are reported and explained, thanks to material, electric data and mechanical simulations. In spite of its lower performance on large device dimensions, PVD-TiN demonstrates a better overall trade-off, leading to a 17% ion improvement on 25nm short and narrow devices

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2006 International Electron Devices Meeting

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