C. J. Kim, Donghun Kang, I. Song, J. Park, Hyuck Lim, Sunil Kim, Eunha Lee, Ranju Chung, Jae Cheol Lee, Young-soo Park
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We, for the first time, have successfully fabricated amorphous Ga 2O3-In2O3-ZnO thin film transistor (TFT) with excellent electrical properties and good stability under constant current stress. This transistor shows a field effect mobility of 10 cm2/Vs, an off current below 2 pA and a drain current on-to-off ratio of above 108. The threshold voltage shift was less than 0.2 V for 100 hours at 3 muA and 60 degC. Such stable oxide transistors can be utilized as driving transistor for large area OLED display
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