具有双隧道结的25nm平面体sonos型存储器

2006 International Electron Devices Meeting Pub Date : 2006-12-01 DOI:10.1109/IEDM.2006.346945

R. Ohba, Y. Mitani, N. Sugiyama, S. Fujita

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引用次数: 5

摘要

在双隧道氧化物之间有硅纳米晶层的25nm门长块平面sonos型存储器，由于硅纳米晶中的库仑封锁和量子约束，表现出优异的存储特性。实验证明了电荷保留和w/e速度之间的权衡具有很大的优势，并且表明通过Si纳米晶体尺寸缩放可以进一步缩放和改进器件。双隧道结sonos型存储器是小于25nm区域的有力候选

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25 nm Planar Bulk SONOS-type Memory with Double Tunnel Junction

25nm gate length bulk-planar SONOS-type memory, which has Si nanocrystalline layer between double tunnel oxides, shows excellent memory characteristics due to Coulomb blockade and quantum confinement in Si nanocrystals. A direct evidence of great advantage in trade-off between charge retention and w/e speed is shown experimentally, and it is shown that further device scaling and improvement are possible by Si nanocrystal size scaling. Double tunnel junction SONOS-type memory is a strong candidate in less than 25nm region

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2006 International Electron Devices Meeting

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