热处理对MBE-AlInAs电性能的影响

Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 1994-03-27 DOI:10.1109/ICIPRM.1994.328245

J.K. Luo, H. Thomas, S. Clark, R. Williams

{"title":"热处理对MBE-AlInAs电性能的影响","authors":"J.K. Luo, H. Thomas, S. Clark, R. Williams","doi":"10.1109/ICIPRM.1994.328245","DOIUrl":null,"url":null,"abstract":"The effect of thermal treatment on the electrical properties of Al/sub 0.48/In/sub 0.52/As/InP materials grown by molecular beam epitaxy (MBE) has been investigated using Schottky barrier structures. It was found that the intrinsic defects incorporated in MBE-AlInAs layers cause an excess tunneling current at forward and reverse bias, and are responsible for the low barrier height of Schottky diodes. Thermal annealing at T/sub A/>500/spl deg/C annihilates the major defects in the AlInAs layer, which results in a reduction of the excess tunneling current and enhancement of the barrier height. These results therefore, demonstrate a method to overcome the shortcomings introduced by defects and to improve the electrical properties of MBE-AlInAs materials.<<ETX>>","PeriodicalId":161711,"journal":{"name":"Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"37 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1994-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"The effect of thermal treatment on the electrical properties of MBE-AlInAs\",\"authors\":\"J.K. Luo, H. Thomas, S. Clark, R. Williams\",\"doi\":\"10.1109/ICIPRM.1994.328245\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The effect of thermal treatment on the electrical properties of Al/sub 0.48/In/sub 0.52/As/InP materials grown by molecular beam epitaxy (MBE) has been investigated using Schottky barrier structures. It was found that the intrinsic defects incorporated in MBE-AlInAs layers cause an excess tunneling current at forward and reverse bias, and are responsible for the low barrier height of Schottky diodes. Thermal annealing at T/sub A/>500/spl deg/C annihilates the major defects in the AlInAs layer, which results in a reduction of the excess tunneling current and enhancement of the barrier height. These results therefore, demonstrate a method to overcome the shortcomings introduced by defects and to improve the electrical properties of MBE-AlInAs materials.<<ETX>>\",\"PeriodicalId\":161711,\"journal\":{\"name\":\"Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)\",\"volume\":\"37 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1994-03-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.1994.328245\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1994.328245","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

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摘要

采用肖特基势垒结构研究了热处理对分子束外延(MBE)生长Al/sub 0.48/In/sub 0.52/As/InP材料电性能的影响。发现MBE-AlInAs层的固有缺陷导致了正向偏置和反向偏置下的过量隧道电流，并导致了肖特基二极管的低势垒高度。在T/sub A/>500/spl℃的温度下进行热处理，可以消除AlInAs层中的主要缺陷，从而降低了多余的隧穿电流，提高了势垒高度。因此，这些结果展示了一种克服由缺陷引入的缺点并改善MBE-AlInAs材料电性能的方法。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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The effect of thermal treatment on the electrical properties of MBE-AlInAs

The effect of thermal treatment on the electrical properties of Al/sub 0.48/In/sub 0.52/As/InP materials grown by molecular beam epitaxy (MBE) has been investigated using Schottky barrier structures. It was found that the intrinsic defects incorporated in MBE-AlInAs layers cause an excess tunneling current at forward and reverse bias, and are responsible for the low barrier height of Schottky diodes. Thermal annealing at T/sub A/>500/spl deg/C annihilates the major defects in the AlInAs layer, which results in a reduction of the excess tunneling current and enhancement of the barrier height. These results therefore, demonstrate a method to overcome the shortcomings introduced by defects and to improve the electrical properties of MBE-AlInAs materials.<>

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Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)

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