射频mosfet衬底电阻的提取方法

Proceedings of the 2002 International Conference on Microelectronic Test Structures, 2002. ICMTS 2002. Pub Date : 2002-04-08 DOI:10.1109/ICMTS.2002.1193167

Jeonghu Han, M. Je, Hyungcheol Shin

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引用次数: 2

摘要

本文提出了一种简单、准确的方法，从测量的网络参数中提取射频MOSFET的衬底电阻。给出了0.18-/spl mu/m mosfet在不同偏置条件和不同几何形状器件下的提取结果。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Extraction method for substrate resistance of RF MOSFETs

This paper proposes a simple and accurate method for extracting substrate resistance of an RF MOSFET from the measured network parameters. The extraction results for 0.18-/spl mu/m MOSFETs are presented for various bias conditions and devices with different geometries.

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Proceedings of the 2002 International Conference on Microelectronic Test Structures, 2002. ICMTS 2002.

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