低温Pd直接键合和跨InP-Pd-GaAs界面的电输运

Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 1994-03-27 DOI:10.1109/ICIPRM.1994.328311

I. Tan, C. Reaves, J. J. Dudley, A. Holmes, D. Babic, E. Hu, J. Bowers, S. Denbaars

{"title":"低温Pd直接键合和跨InP-Pd-GaAs界面的电输运","authors":"I. Tan, C. Reaves, J. J. Dudley, A. Holmes, D. Babic, E. Hu, J. Bowers, S. Denbaars","doi":"10.1109/ICIPRM.1994.328311","DOIUrl":null,"url":null,"abstract":"We have developed a low-temperature Pd bonding to integrate InP material with the GaAs substrate. The solid state reactions of Pd with both InP and GaAs allows Pd to be used as a sandwiched ohmic contact between two dissimilar materials. The InP-Pd-GaAs interfaces have been characterized by scanning electron microscopy, optical reflectance, and electrical transport.<<ETX>>","PeriodicalId":161711,"journal":{"name":"Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1994-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Low-temperature Pd direct bonding and electrical transport across InP-Pd-GaAs interfaces\",\"authors\":\"I. Tan, C. Reaves, J. J. Dudley, A. Holmes, D. Babic, E. Hu, J. Bowers, S. Denbaars\",\"doi\":\"10.1109/ICIPRM.1994.328311\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We have developed a low-temperature Pd bonding to integrate InP material with the GaAs substrate. The solid state reactions of Pd with both InP and GaAs allows Pd to be used as a sandwiched ohmic contact between two dissimilar materials. The InP-Pd-GaAs interfaces have been characterized by scanning electron microscopy, optical reflectance, and electrical transport.<<ETX>>\",\"PeriodicalId\":161711,\"journal\":{\"name\":\"Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)\",\"volume\":\"6 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1994-03-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.1994.328311\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1994.328311","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 2

摘要

我们开发了一种低温Pd键合，将InP材料与GaAs衬底集成在一起。Pd与InP和GaAs的固态反应使得Pd可以作为两种不同材料之间的夹心欧姆接触。通过扫描电子显微镜、光学反射率和电输运对InP-Pd-GaAs界面进行了表征。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Low-temperature Pd direct bonding and electrical transport across InP-Pd-GaAs interfaces

We have developed a low-temperature Pd bonding to integrate InP material with the GaAs substrate. The solid state reactions of Pd with both InP and GaAs allows Pd to be used as a sandwiched ohmic contact between two dissimilar materials. The InP-Pd-GaAs interfaces have been characterized by scanning electron microscopy, optical reflectance, and electrical transport.<>

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Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)

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