顶浮栅(TFG)闪存EEPROM单元耦合系数的提取

Proceedings of the 2002 International Conference on Microelectronic Test Structures, 2002. ICMTS 2002. Pub Date : 2002-04-08 DOI:10.1109/ICMTS.2002.1193186

D. McCarthy, M. O’Shea, R. Duane, K. McCarthy, A. Concannon, A. Mathewson

{"title":"顶浮栅(TFG)闪存EEPROM单元耦合系数的提取","authors":"D. McCarthy, M. O’Shea, R. Duane, K. McCarthy, A. Concannon, A. Mathewson","doi":"10.1109/ICMTS.2002.1193186","DOIUrl":null,"url":null,"abstract":"A novel measurement technique utilising a new test structure is applied to the existing subthreshold methodology to extract coupling coefficients of the Top-Floating-Gate (TFG) cell. The TFG cell is unique in structure and operation in comparison with current NVM devices. It is designed with the FG surrounding the CG which greatly enhances the gate coupling ratio (/spl alpha//sub cg/) allowing a small area cell and avoiding the use of expensive z-direction extensions unlike the industry standard stacked-gate approach. This work quantifies this benefit for the area efficient TFG cell design.","PeriodicalId":188074,"journal":{"name":"Proceedings of the 2002 International Conference on Microelectronic Test Structures, 2002. ICMTS 2002.","volume":"46 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Extraction of the coupling coefficients for the top-floating-gate (TFG) flash EEPROM cell\",\"authors\":\"D. McCarthy, M. O’Shea, R. Duane, K. McCarthy, A. Concannon, A. Mathewson\",\"doi\":\"10.1109/ICMTS.2002.1193186\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A novel measurement technique utilising a new test structure is applied to the existing subthreshold methodology to extract coupling coefficients of the Top-Floating-Gate (TFG) cell. The TFG cell is unique in structure and operation in comparison with current NVM devices. It is designed with the FG surrounding the CG which greatly enhances the gate coupling ratio (/spl alpha//sub cg/) allowing a small area cell and avoiding the use of expensive z-direction extensions unlike the industry standard stacked-gate approach. This work quantifies this benefit for the area efficient TFG cell design.\",\"PeriodicalId\":188074,\"journal\":{\"name\":\"Proceedings of the 2002 International Conference on Microelectronic Test Structures, 2002. ICMTS 2002.\",\"volume\":\"46 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-04-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 2002 International Conference on Microelectronic Test Structures, 2002. ICMTS 2002.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICMTS.2002.1193186\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 2002 International Conference on Microelectronic Test Structures, 2002. ICMTS 2002.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICMTS.2002.1193186","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 3

摘要

利用一种新的测试结构，将一种新的测量技术应用于现有的亚阈值方法中，以提取顶浮门(TFG)单元的耦合系数。与目前的NVM器件相比，TFG单元在结构和操作上都是独一无二的。它的设计与FG围绕CG，大大提高了栅极耦合比(/spl alpha//sub CG /)，允许小面积单元，避免使用昂贵的z方向扩展，不像行业标准的堆叠栅极方法。这项工作量化了面积高效TFG细胞设计的这种好处。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Extraction of the coupling coefficients for the top-floating-gate (TFG) flash EEPROM cell

A novel measurement technique utilising a new test structure is applied to the existing subthreshold methodology to extract coupling coefficients of the Top-Floating-Gate (TFG) cell. The TFG cell is unique in structure and operation in comparison with current NVM devices. It is designed with the FG surrounding the CG which greatly enhances the gate coupling ratio (/spl alpha//sub cg/) allowing a small area cell and avoiding the use of expensive z-direction extensions unlike the industry standard stacked-gate approach. This work quantifies this benefit for the area efficient TFG cell design.

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Proceedings of the 2002 International Conference on Microelectronic Test Structures, 2002. ICMTS 2002.

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