利用快速浮栅技术和基于真实记忆单元的测试结构，对EEPROM隧道氧化物进行晶片级表征

Proceedings of the 2002 International Conference on Microelectronic Test Structures, 2002. ICMTS 2002. Pub Date : 2002-04-08 DOI:10.1109/ICMTS.2002.1193187

S. Renard, P. Boivin, J. Autran

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引用次数: 0

摘要

我们报告了一种基于浮栅技术的EEPROM隧道氧化物的快速表征技术的发展，并使用了一个真实的基于存储单元的测试结构。一个连续的测量程序和数据分析已经成功地实现了在电荷保留和隧道氧化物缺陷方面对泄漏电流进行自动晶圆筛选。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Wafer-level characterization of EEPROM tunnel oxide using a fast floating-gate technique and a realistic memory cell-based test structure

We report on the development of a fast characterization technique of EEPROM tunnel oxides based on the floating-gate technique and using a realistic memory cell-based test structure. A sequential measurement procedure and data analysis have been successfully implemented to perform automatic wafer screening of leakage currents in terms of charge retention and tunnel oxide defectivity.

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Proceedings of the 2002 International Conference on Microelectronic Test Structures, 2002. ICMTS 2002.

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