反向嵌入SiGe结构mosfet的设计与制造

2006 International Electron Devices Meeting Pub Date : 2006-12-01 DOI:10.1109/IEDM.2006.346813

R. Donaton, D. Chidambarrao, J. Johnson, P. Chang, Yaocheng Liu, W. Henson, J. Holt, Xi Li, Jinghong Li, A. Domenicucci, A. Madan, K. Rim, C. Wann

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引用次数: 21

摘要

提出了一种包含SiGe应力源的新型器件结构，用于在nMOSFET沟道中施加拉伸应变。通过SiGe/Si双层结构的弹性松弛/应变，在Si通道中产生了400MPa的单轴拉应力。与没有应变的控制器件相比，这种应变可使sub-60nm器件的迁移率提高40%，驱动电流提高15%

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Design and Fabrication of MOSFETs with a Reverse Embedded SiGe (Rev. e-SiGe) Structure

A novel device structure containing a SiGe stressor is used to impose tensile strain in nMOSFET channel. 400MPa of uniaxial tensile stress is induced in the Si channel through elastic relaxation/strain of the SiGe/Si bi-layer structure. This strain results in 40% mobility enhancement and 15% drive current improvement for sub-60nm devices compared to the control device with no strain

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2006 International Electron Devices Meeting

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