MOCVD生长的原位表征

1993 (5th) International Conference on Indium Phosphide and Related Materials Pub Date : 1993-04-19 DOI:10.1109/ICIPRM.1993.380661

J. Epler, H. P. Schweizer, T. Jung

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引用次数: 4

摘要

采用原位弹性光散射技术，实时表征了金属有机化学气相沉积(MOCVD)法制备的InP-InGaAsP和GaAs外延层的形貌。观察到原子平台和界面粗糙度的演化等现象。非原位原子力显微镜图像提供了原位数据的佐证。

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In situ characterization of MOCVD growth

In situ elastic light scattering was used to characterize, in real-time, the topography of InP-InGaAsP and GaAs epitaxial layers grown by metalorganic chemical vapor deposition (MOCVD). Phenomena such as the evolution of the atomic terrace and interface included roughness were observed. Ex situ atomic force microscopy images provide corroboration of the in situ data.<>

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1993 (5th) International Conference on Indium Phosphide and Related Materials

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