{"title":"InGaAsP放大器中的光开关","authors":"D. Davies","doi":"10.1109/ICIPRM.1994.328164","DOIUrl":null,"url":null,"abstract":"Future optical communications networks will require large bandwidth, high capacity switching systems that can be controlled as easily and flexibly as possible; in a variety of applications involving high bit rate systems, photonic switching appears to offer advantages in the provision of space, time and wavelength switching. Optical amplifiers based on InGaAsP material technology are proving to be very flexible when employed in such switching devices. As well as offering compact, readily controlled gates with a considerable on/off ratio, their inherent gain can overcome splitting losses in spatial switching arrays, while their nonlinear and spectral properties allow a range of functions to be implemented suitable for high speed and multi-wavelength systems. Means of exploiting these properties can roughly be divided into devices where the optical path is controlled electronically via the injection current, and those with a d.c. injection current where incoming intense optical pulses cause modulation via nonlinear effects in the device active region. Examples of both will be discussed in this paper.<<ETX>>","PeriodicalId":161711,"journal":{"name":"Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"362 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1994-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Optical switching in InGaAsP amplifiers\",\"authors\":\"D. Davies\",\"doi\":\"10.1109/ICIPRM.1994.328164\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Future optical communications networks will require large bandwidth, high capacity switching systems that can be controlled as easily and flexibly as possible; in a variety of applications involving high bit rate systems, photonic switching appears to offer advantages in the provision of space, time and wavelength switching. Optical amplifiers based on InGaAsP material technology are proving to be very flexible when employed in such switching devices. As well as offering compact, readily controlled gates with a considerable on/off ratio, their inherent gain can overcome splitting losses in spatial switching arrays, while their nonlinear and spectral properties allow a range of functions to be implemented suitable for high speed and multi-wavelength systems. Means of exploiting these properties can roughly be divided into devices where the optical path is controlled electronically via the injection current, and those with a d.c. injection current where incoming intense optical pulses cause modulation via nonlinear effects in the device active region. Examples of both will be discussed in this paper.<<ETX>>\",\"PeriodicalId\":161711,\"journal\":{\"name\":\"Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)\",\"volume\":\"362 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1994-03-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.1994.328164\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1994.328164","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

未来的光通信网络将需要大带宽、高容量的交换系统,这些系统要尽可能容易和灵活地控制;在涉及高比特率系统的各种应用中,光子交换似乎在提供空间、时间和波长交换方面具有优势。基于InGaAsP材料技术的光放大器在这种开关器件中被证明是非常灵活的。除了提供紧凑,易于控制的具有相当开/关比的门外,其固有增益可以克服空间开关阵列中的分裂损耗,而其非线性和光谱特性允许实现适用于高速和多波长系统的一系列功能。利用这些特性的方法可以大致分为通过注入电流以电子方式控制光路的器件,以及那些具有直流注入电流的器件,其中入射的强光脉冲通过器件有源区域的非线性效应引起调制。本文将讨论这两种方法的例子。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
Optical switching in InGaAsP amplifiers
Future optical communications networks will require large bandwidth, high capacity switching systems that can be controlled as easily and flexibly as possible; in a variety of applications involving high bit rate systems, photonic switching appears to offer advantages in the provision of space, time and wavelength switching. Optical amplifiers based on InGaAsP material technology are proving to be very flexible when employed in such switching devices. As well as offering compact, readily controlled gates with a considerable on/off ratio, their inherent gain can overcome splitting losses in spatial switching arrays, while their nonlinear and spectral properties allow a range of functions to be implemented suitable for high speed and multi-wavelength systems. Means of exploiting these properties can roughly be divided into devices where the optical path is controlled electronically via the injection current, and those with a d.c. injection current where incoming intense optical pulses cause modulation via nonlinear effects in the device active region. Examples of both will be discussed in this paper.<>
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Comparisons between conventional LEC, VCZ and VGF for the growth of InP crystals Reliability of InP-based HBT's and HEMT's: experiments, failure mechanisms, and statistics Bulk InP technologies: InP against GaAs Improvement of InAlAs/InP heterointerface grown by MOVPE by using thin AlP layer Low pressure pyrolysis of alternative phosphorous precursors for chemical beam epitaxial growth of InP and related compounds
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1