{"title":"伪晶InP/InGaAs异质结双极晶体管(phbt)在25°C时fT = 765 GHz，在-55°C时fT = 845 GHz","authors":"W. Snodgrass, W. Hafez, N. Harff, M. Feng","doi":"10.1109/IEDM.2006.346853","DOIUrl":null,"url":null,"abstract":"Pseudomorphic InP HBTs (PHBTs) with a vertically scaled design implementing a 12.5 nm base and 55 nm collector exhibit record current gain cutoff frequency performance of f<sub>T</sub>=765 GHz when measured at 25°C. When cooled to -55°C, f<sub>T</sub> improves more than 10% to f<sub>T</sub>=845 GHz due to enhanced electron transport and reduced parasitic charging delays as determined by small signal equivalent circuit parameter extraction. Peak performance current density J<sub>c</sub>=18.7 mA/μm<sup>2</sup> and BV<sub>CEO</sub> =1.65 V","PeriodicalId":366359,"journal":{"name":"2006 International Electron Devices Meeting","volume":"75 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"66","resultStr":"{\"title\":\"Pseudomorphic InP/InGaAs Heterojunction Bipolar Transistors (PHBTs) Experimentally Demonstrating fT = 765 GHz at 25°C Increasing to fT = 845 GHz at -55°C\",\"authors\":\"W. Snodgrass, W. Hafez, N. Harff, M. Feng\",\"doi\":\"10.1109/IEDM.2006.346853\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Pseudomorphic InP HBTs (PHBTs) with a vertically scaled design implementing a 12.5 nm base and 55 nm collector exhibit record current gain cutoff frequency performance of f<sub>T</sub>=765 GHz when measured at 25°C. When cooled to -55°C, f<sub>T</sub> improves more than 10% to f<sub>T</sub>=845 GHz due to enhanced electron transport and reduced parasitic charging delays as determined by small signal equivalent circuit parameter extraction. Peak performance current density J<sub>c</sub>=18.7 mA/μm<sup>2</sup> and BV<sub>CEO</sub> =1.65 V\",\"PeriodicalId\":366359,\"journal\":{\"name\":\"2006 International Electron Devices Meeting\",\"volume\":\"75 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"66\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2006 International Electron Devices Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.2006.346853\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2006.346853","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Pseudomorphic InP/InGaAs Heterojunction Bipolar Transistors (PHBTs) Experimentally Demonstrating fT = 765 GHz at 25°C Increasing to fT = 845 GHz at -55°C
Pseudomorphic InP HBTs (PHBTs) with a vertically scaled design implementing a 12.5 nm base and 55 nm collector exhibit record current gain cutoff frequency performance of fT=765 GHz when measured at 25°C. When cooled to -55°C, fT improves more than 10% to fT=845 GHz due to enhanced electron transport and reduced parasitic charging delays as determined by small signal equivalent circuit parameter extraction. Peak performance current density Jc=18.7 mA/μm2 and BVCEO =1.65 V
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