基于Intel 4 CMOS技术的先进FinFET晶体管可靠性研究

M. Jamil, S. Mukhopadhay, M. Ghoneim, A. Shailos, C. Prasad, I. Meric, S. Ramey
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引用次数: 0

摘要

与上一代(英特尔7)相比,英特尔4 CMOS FinFET技术在等功耗下的性能提升了20%以上。本文报告了对英特尔4技术的可靠性研究,该技术在功率、性能和缩放方面扩展了摩尔定律,证明了与上一代技术相当或更好的可靠性。行业领先的技术扩展带来了许多挑战,包括产量、性能和可靠性的共同优化。本文报告了具有行业标准可靠性的英特尔4技术的发展,同时在代际性能和密度方面提供了显著的进步。
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Reliability Studies on Advanced FinFET Transistors of the Intel 4 CMOS Technology
The Intel 4 CMOS FinFET technology delivers over 20% performance gains at iso-power over the prior generation (Intel 7). This paper reports reliability studies on the Intel 4 technology that demonstrate matched or better reliability while extending Moore's law in the areas of power, performance, and scaling over its predecessor. Industry-leading technology scaling comes with numerous challenges, including co-optimization of yield, performance, and reliability. This paper reports the development of Intel 4 technology with industry-standard reliability while delivering significant advancement in generational performance and density.
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