用于高性能CMOS的新型应变SiGe: c沟道平面55nm nMOSFET的制备

2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303) Pub Date : 2002-06-11 DOI:10.1109/VLSIT.2002.1015402

T. Ernst, J. Hartmann, V. Loup, F. Ducroquet, P. Dollfus, G. Guégan, D. Lafond, P. Hilliger, B. Previtali, A. Toffoli, S. Deleonibus

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引用次数: 4

摘要

我们首次提出了与标准50纳米CMOS工艺流程兼容的拉伸应变外延生长Si:C和SiGe:C通道NMOS器件。这种CMOS集成新架构的一些优点是高度逆行的通道掺杂谱和抑制硼扩散和氧化增强扩散(OED)。这些特性导致短通道效应的显著降低。本文首次对Si:C和SiGe:C逆温层(77 K至300 K)中的输运进行了表征，并确定了相关的散射机制。精细调整的碳浓度对输运性质有很大的影响。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Fabrication of a novel strained SiGe:C-channel planar 55 nm nMOSFET for high-performance CMOS

We present for the first time tensile-strained epitaxially grown Si:C and SiGe:C channel NMOS devices compatible with a standard 50 nm CMOS process flow. Some of the advantages of this new architecture for CMOS integration are a highly retrograde channel doping profile and a suppression of boron diffusion and Oxidation Enhanced Diffusion (OED). Those properties lead to a dramatic decrease of short channel effects. Transport in the Si:C and SiGe:C inversion layers is characterized for the first time (77 K to 300 K) and the associated scattering mechanisms are identified. Finely tuned carbon concentration have a strong impact on transport properties.

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2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303)

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