深尺度离子电介质中引起击穿的陷阱

2006 International Electron Devices Meeting Pub Date : 2006-12-01 DOI:10.1109/IEDM.2006.346893

P. Nicollian, A. Krishnan, C. Chancellor, R. Khamankar

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引用次数: 28

摘要

这篇论文表明，至少需要两个陷阱才能导致硅薄膜在10A以下击穿。至少有一个trap是接口状态，至少有一个trap是bulk状态。在低电压下，击穿的限速步骤是界面陷阱的产生，并由H0的释放控制

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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The Traps that cause Breakdown in Deeply Scaled SiON Dielectrics

The paper shows that a minimum of two traps is required to cause breakdown in SiON films down to 10A. At least one trap must be an interface state and at least one must be a bulk state. At low voltages, the rate limiting step for breakdown is the generation of interface traps and is controlled by the release of H0

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2006 International Electron Devices Meeting

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