使用GCIB处理的超低k集成解决方案

Proceedings of the IEEE 2004 International Interconnect Technology Conference (IEEE Cat. No.04TH8729) Pub Date : 2004-06-07 DOI:10.1109/IITC.2004.1345741

B. White, G. Book, J. Hautala, M. Tabat

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引用次数: 2

摘要

将多孔低k材料集成到45nm节点的互连技术中，对蚀刻、结灰和清洁工艺提出了许多挑战。气团离子束(GCIB)的干法处理采用了由松散结合的原子或分子团组成的高能量束。我们将展示GCIB在孔隙密封、蚀刻和灰- msq特性方面的能力，同时与传统等离子体工艺相比，将低k薄膜损伤降到最低。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Ultra low-k integration solutions using GCIB processing

Integration of porous low-k materials for interconnect technology at the 45nm node presents many challenges to etch, ash and cleans processes. Dry processing with a gas cluster ion beam (GCIB) employs a highly energetic beam of loosely bound atomic or molecular clusters. We will show the ability of GCIB to pore seal, etch and ash p-MSQ features, while minimizing low-k film damage as compared to traditional plasma processes.

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Proceedings of the IEEE 2004 International Interconnect Technology Conference (IEEE Cat. No.04TH8729)

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