{"title":"HBr等离子体中InGaAs在InAlAs上的高选择性蚀刻","authors":"I. Adesida, S. Agarwala, C. Caneau, R. Bhat","doi":"10.1109/ICIPRM.1993.380567","DOIUrl":null,"url":null,"abstract":"A selective reactive ion etching (SRIE) process for the etching of InGaAs on InAlAs in HBr plasmas has been developed. A selectivity value as high as 160 was achieved at a bias voltage of -100 V. To date, this is the highest selectivity ever reported for this material system. The etch-stop mechanism is inferred from Auger electron spectroscopy to be due the formation of involatile aluminum oxide. The SRIE process reported should be for the fabrication of InAlAs/InGaAs/InP heterostructure field effect transistors (HFETs).<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"10 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Highly selective etching of InGaAs on InAlAs in HBr plasma\",\"authors\":\"I. Adesida, S. Agarwala, C. Caneau, R. Bhat\",\"doi\":\"10.1109/ICIPRM.1993.380567\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A selective reactive ion etching (SRIE) process for the etching of InGaAs on InAlAs in HBr plasmas has been developed. A selectivity value as high as 160 was achieved at a bias voltage of -100 V. To date, this is the highest selectivity ever reported for this material system. The etch-stop mechanism is inferred from Auger electron spectroscopy to be due the formation of involatile aluminum oxide. The SRIE process reported should be for the fabrication of InAlAs/InGaAs/InP heterostructure field effect transistors (HFETs).<<ETX>>\",\"PeriodicalId\":186256,\"journal\":{\"name\":\"1993 (5th) International Conference on Indium Phosphide and Related Materials\",\"volume\":\"10 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1993-04-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1993 (5th) International Conference on Indium Phosphide and Related Materials\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.1993.380567\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1993 (5th) International Conference on Indium Phosphide and Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1993.380567","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Highly selective etching of InGaAs on InAlAs in HBr plasma
A selective reactive ion etching (SRIE) process for the etching of InGaAs on InAlAs in HBr plasmas has been developed. A selectivity value as high as 160 was achieved at a bias voltage of -100 V. To date, this is the highest selectivity ever reported for this material system. The etch-stop mechanism is inferred from Auger electron spectroscopy to be due the formation of involatile aluminum oxide. The SRIE process reported should be for the fabrication of InAlAs/InGaAs/InP heterostructure field effect transistors (HFETs).<>
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