新型高离子、低Vdd、恒SS的SiGe/Si线隧穿效应晶体管

2015 IEEE International Electron Devices Meeting (IEDM) Pub Date : 2015-12-01 DOI:10.1109/IEDM.2015.7409757

S. Blaeser, S. Glass, C. Schulte-Braucks, K. Narimani, N. V. D. Driesch, S. Wirths, A. Tiedemann, S. Trellenkamp, D. Buca, Q. Zhao, S. Mantl

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引用次数: 45

摘要

本文提出了一种新型的SiGe/Si隧道场效应晶体管(TFET)，该晶体管利用与栅极电场平行的线隧穿效应。该器件利用选择性自调节硅化和源隧道结SiGe层内的反掺杂孔，在电源电压VDD = -0.5 V时产生6.7 μA/μm的高导通电流，并在漏极电流Id的4个数量级上产生约80 mV/dec的恒定亚阈值摆幅(SS)。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Novel SiGe/Si line tunneling TFET with high Ion at low Vdd and constant SS

This paper presents a novel SiGe/Si tunneling field-effect transistor (TFET) which exploits line tunneling parallel with the gate electric field. The device makes use of selective and self-adjusted silicidation and a counter doped pocket within the SiGe layer at the source tunnel junction, resulting in a high on-current Ion = 6.7 μA/μm at a supply voltage VDD = -0.5 V and a constant subthreshold swing (SS) of about 80 mV/dec over four orders of magnitude of drain-current Id.

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2015 IEEE International Electron Devices Meeting (IEDM)

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