具有多个应力源的(110)/衬底/通道的高性能PMOS器件

2006 International Electron Devices Meeting Pub Date : 2006-12-01 DOI:10.1109/IEDM.2006.346960

H. Wang, Shih-Hian Huang, Ching-Wei Tsai, Hsien-Hsin Lin, Tze-Liang Lee, Shih-Chang Chen, C. H. Diaz, M. Liang, J. Sun

{"title":"具有多个应力源的(110)/衬底/通道的高性能PMOS器件","authors":"H. Wang, Shih-Hian Huang, Ching-Wei Tsai, Hsien-Hsin Lin, Tze-Liang Lee, Shih-Chang Chen, C. H. Diaz, M. Liang, J. Sun","doi":"10.1109/IEDM.2006.346960","DOIUrl":null,"url":null,"abstract":"A study was performed to investigate the effect of multiple stressors on CMOS devices on (110) and (100) substrates with different channel directions. For the first time, 87% ION-IOFF improvement is achieved by utilizing SiGe-S/D and compressive contact etch stop layer (c-CESL) for PMOS devices on (110) substrate with lang111'rang channel direction. The improvement is similar to that on conventional (100) substrate with lang110>rangchannel direction and can be explained by piezoresistive coefficients. Record PMOS device performance of Ion = 900 muA/mum at Ioff = 100 nA/mum and VDD = 1.0V for 40nm gate length is demonstrated","PeriodicalId":366359,"journal":{"name":"2006 International Electron Devices Meeting","volume":"130 10 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":"{\"title\":\"High-Performance PMOS Devices on (110)/<111'> Substrate/Channel with Multiple Stressors\",\"authors\":\"H. Wang, Shih-Hian Huang, Ching-Wei Tsai, Hsien-Hsin Lin, Tze-Liang Lee, Shih-Chang Chen, C. H. Diaz, M. Liang, J. Sun\",\"doi\":\"10.1109/IEDM.2006.346960\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A study was performed to investigate the effect of multiple stressors on CMOS devices on (110) and (100) substrates with different channel directions. For the first time, 87% ION-IOFF improvement is achieved by utilizing SiGe-S/D and compressive contact etch stop layer (c-CESL) for PMOS devices on (110) substrate with lang111'rang channel direction. The improvement is similar to that on conventional (100) substrate with lang110>rangchannel direction and can be explained by piezoresistive coefficients. Record PMOS device performance of Ion = 900 muA/mum at Ioff = 100 nA/mum and VDD = 1.0V for 40nm gate length is demonstrated\",\"PeriodicalId\":366359,\"journal\":{\"name\":\"2006 International Electron Devices Meeting\",\"volume\":\"130 10 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"9\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2006 International Electron Devices Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.2006.346960\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2006.346960","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 9

摘要

在不同通道方向的(110)和(100)衬底上研究了多个应力源对CMOS器件的影响。通过使用SiGe-S/D和压缩接触蚀刻停止层(c-CESL)，在(110)衬底上的PMOS器件具有lang111'rang通道方向，首次实现了87%的ION-IOFF改进。这种改善与lang110>rangchannel方向的传统(100)衬底相似，可以用压阻系数来解释。演示了在Ioff = 100 nA/mum、VDD = 1.0V、栅极长度为40nm时，离子= 900 muA/mum的PMOS器件性能记录

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High-Performance PMOS Devices on (110)/<111'> Substrate/Channel with Multiple Stressors

A study was performed to investigate the effect of multiple stressors on CMOS devices on (110) and (100) substrates with different channel directions. For the first time, 87% ION-IOFF improvement is achieved by utilizing SiGe-S/D and compressive contact etch stop layer (c-CESL) for PMOS devices on (110) substrate with lang111'rang channel direction. The improvement is similar to that on conventional (100) substrate with lang110>rangchannel direction and can be explained by piezoresistive coefficients. Record PMOS device performance of Ion = 900 muA/mum at Ioff = 100 nA/mum and VDD = 1.0V for 40nm gate length is demonstrated

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2006 International Electron Devices Meeting

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