N. Nenadovic, L. Nanver, H. Schellevis, D. D. de Mooij, V. Zieren, J. Slotboom
{"title":"评价双极晶体管高热阻的灵敏测量方法","authors":"N. Nenadovic, L. Nanver, H. Schellevis, D. D. de Mooij, V. Zieren, J. Slotboom","doi":"10.1109/ICMTS.2002.1193175","DOIUrl":null,"url":null,"abstract":"A sensitive measurement method is used to discern between the thermal effects of very small changes in device surroundings and to extract high thermal resistance values. The description of electro-thermal behavior is complemented by nematic liquid crystal imaging and FEM simulations of the heat spreading around the device.","PeriodicalId":188074,"journal":{"name":"Proceedings of the 2002 International Conference on Microelectronic Test Structures, 2002. ICMTS 2002.","volume":"110 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Sensitive measurement method for evaluation of high thermal resistance in bipolar transistors\",\"authors\":\"N. Nenadovic, L. Nanver, H. Schellevis, D. D. de Mooij, V. Zieren, J. Slotboom\",\"doi\":\"10.1109/ICMTS.2002.1193175\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A sensitive measurement method is used to discern between the thermal effects of very small changes in device surroundings and to extract high thermal resistance values. The description of electro-thermal behavior is complemented by nematic liquid crystal imaging and FEM simulations of the heat spreading around the device.\",\"PeriodicalId\":188074,\"journal\":{\"name\":\"Proceedings of the 2002 International Conference on Microelectronic Test Structures, 2002. ICMTS 2002.\",\"volume\":\"110 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-04-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 2002 International Conference on Microelectronic Test Structures, 2002. ICMTS 2002.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICMTS.2002.1193175\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 2002 International Conference on Microelectronic Test Structures, 2002. ICMTS 2002.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICMTS.2002.1193175","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Sensitive measurement method for evaluation of high thermal resistance in bipolar transistors
A sensitive measurement method is used to discern between the thermal effects of very small changes in device surroundings and to extract high thermal resistance values. The description of electro-thermal behavior is complemented by nematic liquid crystal imaging and FEM simulations of the heat spreading around the device.