质子和氘核注入半绝缘Inp: Fe的红外吸收

D. Fischer, M. O. Manasreh, G. Matous, S. Pearton
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引用次数: 1

摘要

我们研究了半绝缘InP:Fe中氢的钝化,方法是在1 × 10/sup 16/到5 × 10/sup 17/ cm/sup -2/的影响范围内注入0.5到2.0 MeV的质子和氘核单晶样品。这些植入物在红外吸收中产生了一系列的局部振动模式(LVMs),这是由于在各种晶格缺陷和杂质附近磷与植入原子之间形成的键的拉伸振动。这些lvm的系统变化被观察到作为植入物能量、影响和退火温度的函数。
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Infrared absorption in proton- and deuteron-implanted semi-insulating Inp: Fe
We have investigated hydrogen passivation in semi-insulating InP:Fe by implanting single crystal samples with 0.5 to 2.0 MeV protons and deuterons at fluences ranging from 1 x 10/sup 16/ to 5 x 10/sup 17/ cm/sup -2/. These implants give rise to a series of local vibrational modes (LVMs) in infrared absorption which are due to the stretching vibration of the bonds formed between phosphorus and the implanted atom in the vicinity of various lattice defects and impurities. Systematic variations in these LVMs are observed as a function of implant energy, fluence, and annealing temperature.
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