{"title":"掺碳p型In/sub 0.53/Ga/sub 0.47/As及其在InP/In/sub 0.53/Ga/sub 0.47/As异质结双极晶体管中的应用","authors":"C. Tu","doi":"10.1109/ICIPRM.1993.380549","DOIUrl":null,"url":null,"abstract":"P-type carbon-doped In/sub 0.53/Ga/sub 0.47/As grown by various epitaxial techniques is reviewed. High hole concentrations in In/sub 0.53/Ga/sub 0.47/As can be achieved by using CCl/sub 4/ or CBr/sub 4/ as the carbon doping source. The highest hole concentration so far is 9 /spl times/ 10/sup 19/ cm/sup -3/ by gas-source molecular beam epitaxy with CBr/sub 4/. Results of InP/In/sub 0.53/Ga/sub 0.47/A single and double heterojunction bipolar transistors are summarized.<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Carbon-doped p-type In/sub 0.53/Ga/sub 0.47/As and its application to InP/In/sub 0.53/Ga/sub 0.47/As heterojunction bipolar transistors\",\"authors\":\"C. Tu\",\"doi\":\"10.1109/ICIPRM.1993.380549\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"P-type carbon-doped In/sub 0.53/Ga/sub 0.47/As grown by various epitaxial techniques is reviewed. High hole concentrations in In/sub 0.53/Ga/sub 0.47/As can be achieved by using CCl/sub 4/ or CBr/sub 4/ as the carbon doping source. The highest hole concentration so far is 9 /spl times/ 10/sup 19/ cm/sup -3/ by gas-source molecular beam epitaxy with CBr/sub 4/. Results of InP/In/sub 0.53/Ga/sub 0.47/A single and double heterojunction bipolar transistors are summarized.<<ETX>>\",\"PeriodicalId\":186256,\"journal\":{\"name\":\"1993 (5th) International Conference on Indium Phosphide and Related Materials\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1993-04-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1993 (5th) International Conference on Indium Phosphide and Related Materials\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.1993.380549\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1993 (5th) International Conference on Indium Phosphide and Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1993.380549","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Carbon-doped p-type In/sub 0.53/Ga/sub 0.47/As and its application to InP/In/sub 0.53/Ga/sub 0.47/As heterojunction bipolar transistors
P-type carbon-doped In/sub 0.53/Ga/sub 0.47/As grown by various epitaxial techniques is reviewed. High hole concentrations in In/sub 0.53/Ga/sub 0.47/As can be achieved by using CCl/sub 4/ or CBr/sub 4/ as the carbon doping source. The highest hole concentration so far is 9 /spl times/ 10/sup 19/ cm/sup -3/ by gas-source molecular beam epitaxy with CBr/sub 4/. Results of InP/In/sub 0.53/Ga/sub 0.47/A single and double heterojunction bipolar transistors are summarized.<>
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