最先进的GaN垂直功率器件

2015 IEEE International Electron Devices Meeting (IEDM) Pub Date : 2015-12-01 DOI:10.1109/IEDM.2015.7409708

T. Kachi

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引用次数: 11

摘要

综述了氮化镓垂直功率器件的最新进展和发展问题。氮化镓衬底质量的提高激发了研究。最近报道了2kV级pn二极管和1.5kV级垂直晶体管。然而，要展现氮化镓的高性能，还存在一些有待解决的问题。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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State-of-the-art GaN vertical power devices

Recent progress and developing issues of GaN vertical power devices are reviewed. Quality improvement of GaN substrates activates the research. 2kV level pn diodes and 1.5kV level vertical transistors have been reported recently. However, some issues to be solved still exist to show high ability of GaN.

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2015 IEEE International Electron Devices Meeting (IEDM)

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