{"title":"体砷化镓析出物的暗场红外显微镜研究","authors":"M. Brozel, S. Tuzemen","doi":"10.1109/SIM.1992.752702","DOIUrl":null,"url":null,"abstract":"We employ dark-field infrared microscopy for the observation of arsenic precipitates in GaAs. This technique provides similar information that was thought, some time ago, to be only available by using techniques such as Light Scattering Tomography or Scanning Infrared Microscopy. We have investigated undoped GaAs grown by the LEC and Vertical Gradient Freeze techniques and that have undergone different post-growth heat treatments. Three dimensional mappings of precipitates are easily achieved.","PeriodicalId":368607,"journal":{"name":"Proceedings of the 7th Conference on Semi-insulating III-V Materials,","volume":"41 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1992-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Dark-field infrared microscopy investigations of precipitates in bulk gallium arsenide\",\"authors\":\"M. Brozel, S. Tuzemen\",\"doi\":\"10.1109/SIM.1992.752702\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We employ dark-field infrared microscopy for the observation of arsenic precipitates in GaAs. This technique provides similar information that was thought, some time ago, to be only available by using techniques such as Light Scattering Tomography or Scanning Infrared Microscopy. We have investigated undoped GaAs grown by the LEC and Vertical Gradient Freeze techniques and that have undergone different post-growth heat treatments. Three dimensional mappings of precipitates are easily achieved.\",\"PeriodicalId\":368607,\"journal\":{\"name\":\"Proceedings of the 7th Conference on Semi-insulating III-V Materials,\",\"volume\":\"41 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1992-04-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 7th Conference on Semi-insulating III-V Materials,\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SIM.1992.752702\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 7th Conference on Semi-insulating III-V Materials,","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SIM.1992.752702","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Dark-field infrared microscopy investigations of precipitates in bulk gallium arsenide
We employ dark-field infrared microscopy for the observation of arsenic precipitates in GaAs. This technique provides similar information that was thought, some time ago, to be only available by using techniques such as Light Scattering Tomography or Scanning Infrared Microscopy. We have investigated undoped GaAs grown by the LEC and Vertical Gradient Freeze techniques and that have undergone different post-growth heat treatments. Three dimensional mappings of precipitates are easily achieved.
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