{"title":"用于AMOLED显示器的高稳定性、低漏损纳米晶硅底栅薄膜晶体管","authors":"M. Esmaeili-Rad, A. Sazonov, A. Nathan","doi":"10.1109/IEDM.2006.346768","DOIUrl":null,"url":null,"abstract":"We report performance characteristics of nanocrystalline silicon thin-film transistors (TFTs) fabricated at 280 degC by plasma-enhanced chemical vapor deposition. The TFTs exhibit field-effect mobility of 0.8 cm2V-1s-1, threshold voltage of 4 V, on/off current ratio about 108 with an off-current of 10-13 A, and subthreshold slope of 0.8 V/dec. Bias stress measurements show that the TFT is 3-5 times more stable than the hydrogenated amorphous silicon (a-Si:H) counterpart, with a shift in threshold voltage that is less than 5 % at a gate voltage of 15 V","PeriodicalId":366359,"journal":{"name":"2006 International Electron Devices Meeting","volume":"31 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"High Stability, Low Leakage Nanocrystalline Silicon Bottom Gate Thin Film Transistors for AMOLED Displays\",\"authors\":\"M. Esmaeili-Rad, A. Sazonov, A. Nathan\",\"doi\":\"10.1109/IEDM.2006.346768\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We report performance characteristics of nanocrystalline silicon thin-film transistors (TFTs) fabricated at 280 degC by plasma-enhanced chemical vapor deposition. The TFTs exhibit field-effect mobility of 0.8 cm2V-1s-1, threshold voltage of 4 V, on/off current ratio about 108 with an off-current of 10-13 A, and subthreshold slope of 0.8 V/dec. Bias stress measurements show that the TFT is 3-5 times more stable than the hydrogenated amorphous silicon (a-Si:H) counterpart, with a shift in threshold voltage that is less than 5 % at a gate voltage of 15 V\",\"PeriodicalId\":366359,\"journal\":{\"name\":\"2006 International Electron Devices Meeting\",\"volume\":\"31 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2006 International Electron Devices Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.2006.346768\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2006.346768","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
High Stability, Low Leakage Nanocrystalline Silicon Bottom Gate Thin Film Transistors for AMOLED Displays
We report performance characteristics of nanocrystalline silicon thin-film transistors (TFTs) fabricated at 280 degC by plasma-enhanced chemical vapor deposition. The TFTs exhibit field-effect mobility of 0.8 cm2V-1s-1, threshold voltage of 4 V, on/off current ratio about 108 with an off-current of 10-13 A, and subthreshold slope of 0.8 V/dec. Bias stress measurements show that the TFT is 3-5 times more stable than the hydrogenated amorphous silicon (a-Si:H) counterpart, with a shift in threshold voltage that is less than 5 % at a gate voltage of 15 V
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