A submicron InAlAs/n/sup +/-InP HFET with reduced impact ionization

We have fabricated submicron InAlAs/n/sup +/-InP HFETs that employ an InP channel layer to eliminate impact ionization and thus reduce gate leakage, decrease drain conductance, and improve breakdown voltage. Under typical bias conditions, our L/sub g/=0.8 /spl mu/m devices achieve a low g/sub d/ of 5.1 mS/mm, leading to a voltage gain of 25, while the gate current never exceeds 17 /spl mu/A/mm. This is approximately a 60 times lower gate current than for typical InAlAs/InGaAs HEMTs, including edge isolated devices. Off-state drain source breakdown voltage is about 10 V at 1 mA/mm and increases as the device is turned on, confirming that impact ionization is negligible. Our results on a lattice-matched structure suggest considerable potential for optimization by using a strained insulator layer to reduce gate leakage and to improve breakdown still further.<>