{"title":"MOVPE生长掺铬半绝缘InP","authors":"M. Harlow, W. J. Duncan, I. Lealman, P. Spurdens","doi":"10.1109/ICIPRM.1994.328161","DOIUrl":null,"url":null,"abstract":"Growth of chromium doped InP by atmospheric pressure metal-organic vapour phase epitaxy is reported. Hexacarbonyl chromium and bis-benzene chromium are both shown to be efficient Cr precursors although significant co-incorporation of carbon is a limitation of the former. Structural and electrical properties of the layers are described. A compensating deep donor concentration of up to 3/spl times/10/sup 16/ cm/sup -3/ has been achieved. The resistivity of p-InP/Cr-InP/p-InP structures is as high as 3/spl times/10/sup 8/ /spl Omega/ cm. When this structure is incorporated in buried heterostructure lasers for current blocking, improved performance compared with conventional iron doped structures is observed.<<ETX>>","PeriodicalId":161711,"journal":{"name":"Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"52 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1994-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Growth of chromium doped semi-insulating InP by MOVPE\",\"authors\":\"M. Harlow, W. J. Duncan, I. Lealman, P. Spurdens\",\"doi\":\"10.1109/ICIPRM.1994.328161\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Growth of chromium doped InP by atmospheric pressure metal-organic vapour phase epitaxy is reported. Hexacarbonyl chromium and bis-benzene chromium are both shown to be efficient Cr precursors although significant co-incorporation of carbon is a limitation of the former. Structural and electrical properties of the layers are described. A compensating deep donor concentration of up to 3/spl times/10/sup 16/ cm/sup -3/ has been achieved. The resistivity of p-InP/Cr-InP/p-InP structures is as high as 3/spl times/10/sup 8/ /spl Omega/ cm. When this structure is incorporated in buried heterostructure lasers for current blocking, improved performance compared with conventional iron doped structures is observed.<<ETX>>\",\"PeriodicalId\":161711,\"journal\":{\"name\":\"Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)\",\"volume\":\"52 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1994-03-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.1994.328161\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1994.328161","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Growth of chromium doped semi-insulating InP by MOVPE
Growth of chromium doped InP by atmospheric pressure metal-organic vapour phase epitaxy is reported. Hexacarbonyl chromium and bis-benzene chromium are both shown to be efficient Cr precursors although significant co-incorporation of carbon is a limitation of the former. Structural and electrical properties of the layers are described. A compensating deep donor concentration of up to 3/spl times/10/sup 16/ cm/sup -3/ has been achieved. The resistivity of p-InP/Cr-InP/p-InP structures is as high as 3/spl times/10/sup 8/ /spl Omega/ cm. When this structure is incorporated in buried heterostructure lasers for current blocking, improved performance compared with conventional iron doped structures is observed.<>
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