高性能纳米级mosfet的高迁移率材料和新型器件结构

2006 International Electron Devices Meeting Pub Date : 2006-12-01 DOI:10.1109/IEDM.2006.346871

K. Saraswat, C. O. Chui, Donghyun Kim, T. Krishnamohan, A. Pethe

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引用次数: 82

摘要

未来的节点需要具有高迁移率的沟道材料来满足mosfet的ITRS要求。在这项工作中，我们评估了Si, Ge和III-V材料(如GaAs, InAs和InSb)的性能，这些材料的性能甚至可能优于非常高应变的Si

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High Mobility Materials and Novel Device Structures for High Performance Nanoscale MOSFETs

Channel materials with high mobility are needed for future nodes to meet the ITRS requirements of MOSFETs. In this work we assess the performance of Si, Ge, and III-V materials like GaAs, InAs and InSb which may perform better than even very highly strained-Si

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2006 International Electron Devices Meeting

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