单轴和双轴应变Si, SiGe和Ge双栅p- mosfet性能的理论研究

2006 International Electron Devices Meeting Pub Date : 2006-12-01 DOI:10.1109/IEDM.2006.346938

T. Krishnamohan, C. Jungemann, Donghyun Kim, E. Ungersboeck, S. Selberherr, P. Wong, Y. Nishi, K. Saraswat

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引用次数: 14

摘要

利用非局域经验赝势方法(带结构)、全频带蒙特卡罗模拟(输运)、一维泊松-薛定谔(静电)和详细的带间隧道(BTBT)(包括带结构和量子效应)模拟，研究了单轴和双轴应变、带结构、迁移率、有效质量、态密度、通道取向和高场输运对纳米尺度Si、Si、对SiGe和Ge, p-MOS dgfet进行了全面和系统的研究

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Theoretical Investigation Of Performance In Uniaxially- and Biaxially-Strained Si, SiGe and Ge Double-Gate p-MOSFETs

Using the non-local empirical pseudopotential method (bandstructure), full-band Monte-Carlo simulations (transport), 1D Poisson-Schrodinger (electrostatics) and detailed band-to-band-tunneling (BTBT) (including bandstructure and quantum effects) simulations, the effect of uniaxial- and biaxial-strain, band-structure, mobility, effective masses, density of states, channel orientation and high-field transport on the drive current, off-state leakage and switching delay in nano-scale, Si, SiGe and Ge, p-MOS DGFETs is thoroughly and systematically investigated

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2006 International Electron Devices Meeting

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