超陡亚阈斜率pn体束缚SOI场效应管，超低漏极电压低至0.1V

2015 IEEE International Electron Devices Meeting (IEDM) Pub Date : 2015-12-01 DOI:10.1109/IEDM.2015.7409761

J. Ida, Takayuki Mori, Yousuke Kuramoto, Takashi Horii, Takahiro Yoshida, Kazuma Takeda, H. Kasai, M. Okihara, Y. Arai

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引用次数: 26

摘要

我们提出并演示了一种具有pn体束缚结构的超陡阈下斜率(SS)新型SOI场效应管。它具有对称的源漏(S/D)结构。该器件在30年的漏极电流中显示出超陡的SS (< 6mV/dec)，漏极电压低至0.1V。它还具有低泄漏电流(低于1pA/um)，良好的Id-Vd特性和可忽略的滞后特性。

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Super steep subthreshold slope PN-body tied SOI FET with ultra low drain voltage down to 0.1V

We propose and demonstrate a super steep Subthreshold Slope (SS) new type SOI FET with a PN-body tied structure. It has a symmetry source and drain (S/D) structure. The device shows a super steep SS (<;6mV/dec) over 3 decades of the drain current with an ultralow drain voltage down to 0.1V. It also shows a low leakage current (below 1pA/um), a good Id-Vd characteristic and a negligible hysteresis characteristic.

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2015 IEEE International Electron Devices Meeting (IEDM)

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