H. Scheffler, N. Baber, A. Dadgar, T. Wolf, D. Bimberg
{"title":"InP中深部Ti供体能级的空穴捕获截面","authors":"H. Scheffler, N. Baber, A. Dadgar, T. Wolf, D. Bimberg","doi":"10.1109/ICIPRM.1993.380700","DOIUrl":null,"url":null,"abstract":"The hole capture cross section /spl sigma//sub p/ of the deep Ti/sup 3+//Ti/sup 4+/ donor level in InP has been measured as a function of temperature. Two different capacitance spectroscopy techniques have been used, namely deep level transient spectroscopy and an isothermal capacitance measurement method for capture measurements at high and low temperatures, respectively. /spl sigma//sub p/ has been found to increase with temperature from 2.8 /spl times/ 10/sup -23/ cm/sup 2/ at 100 K to 2.7 /spl times/ 10/sup -22/ at 300 K, in agreement with a multiphonon emission process. The capture barrier for hole capture amounts to (30/spl plusmn/5) meV.<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"10 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Hole capture cross section of the deep Ti donor level in InP\",\"authors\":\"H. Scheffler, N. Baber, A. Dadgar, T. Wolf, D. Bimberg\",\"doi\":\"10.1109/ICIPRM.1993.380700\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The hole capture cross section /spl sigma//sub p/ of the deep Ti/sup 3+//Ti/sup 4+/ donor level in InP has been measured as a function of temperature. Two different capacitance spectroscopy techniques have been used, namely deep level transient spectroscopy and an isothermal capacitance measurement method for capture measurements at high and low temperatures, respectively. /spl sigma//sub p/ has been found to increase with temperature from 2.8 /spl times/ 10/sup -23/ cm/sup 2/ at 100 K to 2.7 /spl times/ 10/sup -22/ at 300 K, in agreement with a multiphonon emission process. The capture barrier for hole capture amounts to (30/spl plusmn/5) meV.<<ETX>>\",\"PeriodicalId\":186256,\"journal\":{\"name\":\"1993 (5th) International Conference on Indium Phosphide and Related Materials\",\"volume\":\"10 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1993-04-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1993 (5th) International Conference on Indium Phosphide and Related Materials\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.1993.380700\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1993 (5th) International Conference on Indium Phosphide and Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1993.380700","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Hole capture cross section of the deep Ti donor level in InP
The hole capture cross section /spl sigma//sub p/ of the deep Ti/sup 3+//Ti/sup 4+/ donor level in InP has been measured as a function of temperature. Two different capacitance spectroscopy techniques have been used, namely deep level transient spectroscopy and an isothermal capacitance measurement method for capture measurements at high and low temperatures, respectively. /spl sigma//sub p/ has been found to increase with temperature from 2.8 /spl times/ 10/sup -23/ cm/sup 2/ at 100 K to 2.7 /spl times/ 10/sup -22/ at 300 K, in agreement with a multiphonon emission process. The capture barrier for hole capture amounts to (30/spl plusmn/5) meV.<>
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