Y. Ding, O. Pedreira, M. Lofrano, H. Zahedmanesh, T. Chavez, Hosain Farr, I. Wolf, K. Croes
{"title":"铜互连中热致空洞的形成。主要物理参数的评估","authors":"Y. Ding, O. Pedreira, M. Lofrano, H. Zahedmanesh, T. Chavez, Hosain Farr, I. Wolf, K. Croes","doi":"10.1109/IRPS48203.2023.10117870","DOIUrl":null,"url":null,"abstract":"Using a dedicated test structure, the main physical parameters of void formation due to thermomigration (TM) were assessed. Based on physical and electrical void-analyses, we experimentally determined the time to void nucleation and estimated the heat of transport parameter $Q^{\\ast}= 0.21$ eV for Cu interconnects with CD~1µm, Our studies show that TM has a 6x higher contribution to metal flux compared to the initial stress migration (SM) induced by the coefficient of thermal expansion (CTE) mismatch.","PeriodicalId":159030,"journal":{"name":"2023 IEEE International Reliability Physics Symposium (IRPS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2023-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Thermomigration-induced void formation in Cu-interconnects - Assessment of main physical parameters\",\"authors\":\"Y. Ding, O. Pedreira, M. Lofrano, H. Zahedmanesh, T. Chavez, Hosain Farr, I. Wolf, K. Croes\",\"doi\":\"10.1109/IRPS48203.2023.10117870\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Using a dedicated test structure, the main physical parameters of void formation due to thermomigration (TM) were assessed. Based on physical and electrical void-analyses, we experimentally determined the time to void nucleation and estimated the heat of transport parameter $Q^{\\\\ast}= 0.21$ eV for Cu interconnects with CD~1µm, Our studies show that TM has a 6x higher contribution to metal flux compared to the initial stress migration (SM) induced by the coefficient of thermal expansion (CTE) mismatch.\",\"PeriodicalId\":159030,\"journal\":{\"name\":\"2023 IEEE International Reliability Physics Symposium (IRPS)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2023-03-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2023 IEEE International Reliability Physics Symposium (IRPS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IRPS48203.2023.10117870\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2023 IEEE International Reliability Physics Symposium (IRPS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRPS48203.2023.10117870","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Thermomigration-induced void formation in Cu-interconnects - Assessment of main physical parameters
Using a dedicated test structure, the main physical parameters of void formation due to thermomigration (TM) were assessed. Based on physical and electrical void-analyses, we experimentally determined the time to void nucleation and estimated the heat of transport parameter $Q^{\ast}= 0.21$ eV for Cu interconnects with CD~1µm, Our studies show that TM has a 6x higher contribution to metal flux compared to the initial stress migration (SM) induced by the coefficient of thermal expansion (CTE) mismatch.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
