金属有机气相外延生长高质量应变GaInAsP/GaInAsP量子阱激光器结构

Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 1994-03-27 DOI:10.1109/ICIPRM.1994.328216

K. Streubel, J. Wallin, Gunnar Landgren, L. Zhu, U. Olander, Sebastian Lourdudoss, O. Kjebon

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摘要

在本文中，我们将系统地研究MOVPE生长条件对应变GaInAsP/GaInAsP多量子阱样品质量的影响。几个生长参数以及屏障材料的组成是独立变化的。然后将优化的生长条件应用于制造激光结构，将类似的MQW堆叠作为有源区域。这些器件的优异性能将强调应变材料的高质量，并强调正确选择生长参数的重要性

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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High quality strained GaInAsP/GaInAsP quantum well laser structures grown by metal organic vapor phase epitaxy

In this paper, we shall report on a systematic study on the impact of MOVPE growth conditions on the quality of strained GaInAsP/GaInAsP multi quantum well samples. Several growth parameters as well as the composition of the barrier material were varied independently. The optimized growth conditions were then applied to fabricate laser structures, incorporating similar MQW stacks as active region. The excellent performance of those devices will underline the high quality of the strained material and emphasize the importance of properly chosen growth parameters.<>

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Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)

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