具有大功函数差的高温稳定[Ir3Si-TaN]/ hflon CMOS

2006 International Electron Devices Meeting Pub Date : 2006-12-01 DOI:10.1109/IEDM.2006.346859

C. Wu, B. Hung, A. Chin, S. Wang, W. Chen, X.P. Wang, M. Li, C. Zhu, Y. Jin, H. Tao, S. Chen, M. Liang

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引用次数: 26

摘要

作者首次报道了新的1000度稳定的[Ir3Si-TaN]/HfLaON CMOS，其中自对准和门优先工艺与当前的VLSI完全兼容。测量到5.08和4.24 eV的良好Phim-eff， -0.10和0.18 V的低Vt，在1.6 nm EOT下84和217 cm2/Vs的高迁移率，以及小于20 mV (10 mV /cm, 1小时)的85°c BTI

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High Temperature Stable [Ir3Si-TaN]/HfLaON CMOS with Large Work-Function Difference

The authors report novel 1000degC-stable [Ir₃Si-TaN]/HfLaON CMOS for the first time, where the self-aligned and gate-first process are full compatible to current VLSI. Good Phi_m-eff of 5.08 and 4.24 eV, low V_t of -0.10 and 0.18 V, high mobility of 84 and 217 cm²/Vs at 1.6 nm EOT, and small 85degC BTI <20 mV (10 MV/cm for 1 hr) are measured

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2006 International Electron Devices Meeting

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