{"title":"MBE生长InGaAs中氧污染的定量研究","authors":"J. Harmand, M. Juhel","doi":"10.1109/ICIPRM.1993.380545","DOIUrl":null,"url":null,"abstract":"The contamination by oxygen in the molecular beam epitaxy of InGaAs was studied. The oxygen concentrations were measured by secondary ion mass spectroscopy in samples grown with interruptions. Quantitative estimations of O bulk concentrations were deduced with a very low detection limit. Correlations with growth conditions and electrical properties were observed.<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"74 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A quantitative study of oxygen contamination in InGaAs grown by MBE\",\"authors\":\"J. Harmand, M. Juhel\",\"doi\":\"10.1109/ICIPRM.1993.380545\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The contamination by oxygen in the molecular beam epitaxy of InGaAs was studied. The oxygen concentrations were measured by secondary ion mass spectroscopy in samples grown with interruptions. Quantitative estimations of O bulk concentrations were deduced with a very low detection limit. Correlations with growth conditions and electrical properties were observed.<<ETX>>\",\"PeriodicalId\":186256,\"journal\":{\"name\":\"1993 (5th) International Conference on Indium Phosphide and Related Materials\",\"volume\":\"74 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1993-04-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1993 (5th) International Conference on Indium Phosphide and Related Materials\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.1993.380545\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1993 (5th) International Conference on Indium Phosphide and Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1993.380545","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A quantitative study of oxygen contamination in InGaAs grown by MBE
The contamination by oxygen in the molecular beam epitaxy of InGaAs was studied. The oxygen concentrations were measured by secondary ion mass spectroscopy in samples grown with interruptions. Quantitative estimations of O bulk concentrations were deduced with a very low detection limit. Correlations with growth conditions and electrical properties were observed.<>
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