HfxAl(1-x)O MIM电容器模拟特性的直流应力诱导退化

2006 International Electron Devices Meeting Pub Date : 2006-12-01 DOI:10.1109/IEDM.2006.346783

K. Takeda, R. Yamada, T. Imai, T. Fujiwara, T. Hashimoto, T. Ando

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引用次数: 3

摘要

首次证明了恒压应力作用下HfAlO-MIM电容器的电容密度随时间的增加和线性度的下降。发现外推10年后CD的增加与HfAlO介质中Al的浓度密切相关。因此，Al浓度大于14at。%要求将CD增长保持在1%以下。还发现CD的增加和线性度的下降(温度和频率)源于介质损耗的增加，这些参数之间的关系在数量上与Gevers的模型一致

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DC-stress-induced Degradation of Analog Characteristics in HfxAl(1-x)O MIM Capacitors

Time-dependent capacitance-density (CD) increase and linearity degradations of HfAlO-MIM capacitors by constant voltage stress were demonstrated for the first time. It was found that extrapolated CD increase after 10 years strongly depends on Al concentration in HfAlO dielectric. Accordingly, Al concentration of more than 14 at.% is required to keep CD increase below 1%. It was also found that the CD increase and linearity degradations (temperature and frequency) originate from the dielectric-loss increase and that the relationships between these parameters quantitatively agree with Gevers' model

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2006 International Electron Devices Meeting

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