{"title":"压缩应变InGaAs/InGaAlAs多量子阱中激子跃迁的吸收和光致发光研究","authors":"W. Choi, Y. Hirayama, C. Fonstad","doi":"10.1109/ICIPRM.1993.380580","DOIUrl":null,"url":null,"abstract":"The authors present the results of investigations in which excitonic transitions in compressively strained InGaAs multiple quantum wells (QWs) on InP are studied by absorption and photoluminescence (PL) measurements. Specifically, quantitative exciton parameters such as transition energies, exciton binding energies and radii are estimated from absorption measurements. A comparison is made between strained and lattice-matched QWs. From PL measurements, luminescence characteristics are qualitatively analyzed as a function of well thickness and temperature.<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"92 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Absorption and photoluminescence investigations of excitonic transitions in compressively strained InGaAs/InGaAlAs multiple quantum wells\",\"authors\":\"W. Choi, Y. Hirayama, C. Fonstad\",\"doi\":\"10.1109/ICIPRM.1993.380580\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The authors present the results of investigations in which excitonic transitions in compressively strained InGaAs multiple quantum wells (QWs) on InP are studied by absorption and photoluminescence (PL) measurements. Specifically, quantitative exciton parameters such as transition energies, exciton binding energies and radii are estimated from absorption measurements. A comparison is made between strained and lattice-matched QWs. From PL measurements, luminescence characteristics are qualitatively analyzed as a function of well thickness and temperature.<<ETX>>\",\"PeriodicalId\":186256,\"journal\":{\"name\":\"1993 (5th) International Conference on Indium Phosphide and Related Materials\",\"volume\":\"92 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1993-04-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1993 (5th) International Conference on Indium Phosphide and Related Materials\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.1993.380580\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1993 (5th) International Conference on Indium Phosphide and Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1993.380580","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Absorption and photoluminescence investigations of excitonic transitions in compressively strained InGaAs/InGaAlAs multiple quantum wells
The authors present the results of investigations in which excitonic transitions in compressively strained InGaAs multiple quantum wells (QWs) on InP are studied by absorption and photoluminescence (PL) measurements. Specifically, quantitative exciton parameters such as transition energies, exciton binding energies and radii are estimated from absorption measurements. A comparison is made between strained and lattice-matched QWs. From PL measurements, luminescence characteristics are qualitatively analyzed as a function of well thickness and temperature.<>
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
