用导纳瞬态光谱研究大块和低温MBE半绝缘GaAs的深能级态

Proceedings of the 7th Conference on Semi-insulating III-V Materials, Pub Date : 1992-04-21 DOI:10.1109/SIM.1992.752710

F. Dubecký, J. Darmo, M. Darviras, A. Forster, P. Kordos, H. Luth

{"title":"用导纳瞬态光谱研究大块和低温MBE半绝缘GaAs的深能级态","authors":"F. Dubecký, J. Darmo, M. Darviras, A. Forster, P. Kordos, H. Luth","doi":"10.1109/SIM.1992.752710","DOIUrl":null,"url":null,"abstract":"A new modification of DLTS applicable to semi-insulating (SI) materials based on simultaneous capacitance C(t) and ac conductance G(t) transient analysis, Admittance Transient Spectroscopy (ATS), is introduced. Formulas for C(t), G(t), their differential dC(t), dG(t) and correlated Sc(T), SG(T) forms are presented. The most important features of the ATS based on the simulation are summarized. ATS was applied to the investigation of deep-level states in bulk undoped and low temperature MBE SI GaAs. Some of the results are briefly discussed in the context of the previously published ones.","PeriodicalId":368607,"journal":{"name":"Proceedings of the 7th Conference on Semi-insulating III-V Materials,","volume":"38 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1992-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Investigation of deep-level states in bulk and low-temperature MBE semi-insulating GaAs by admittance transient spectroscopy\",\"authors\":\"F. Dubecký, J. Darmo, M. Darviras, A. Forster, P. Kordos, H. Luth\",\"doi\":\"10.1109/SIM.1992.752710\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A new modification of DLTS applicable to semi-insulating (SI) materials based on simultaneous capacitance C(t) and ac conductance G(t) transient analysis, Admittance Transient Spectroscopy (ATS), is introduced. Formulas for C(t), G(t), their differential dC(t), dG(t) and correlated Sc(T), SG(T) forms are presented. The most important features of the ATS based on the simulation are summarized. ATS was applied to the investigation of deep-level states in bulk undoped and low temperature MBE SI GaAs. Some of the results are briefly discussed in the context of the previously published ones.\",\"PeriodicalId\":368607,\"journal\":{\"name\":\"Proceedings of the 7th Conference on Semi-insulating III-V Materials,\",\"volume\":\"38 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1992-04-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 7th Conference on Semi-insulating III-V Materials,\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SIM.1992.752710\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 7th Conference on Semi-insulating III-V Materials,","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SIM.1992.752710","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 2

摘要

介绍了一种基于电容C(t)和交流电导G(t)同时瞬态分析的适用于半绝缘(SI)材料的DLTS的新改进方法——导纳瞬态光谱(ATS)。给出了C(t)、G(t)及其微分dC(t)、dG(t)和相关Sc(t)、SG(t)形式的公式。在仿真的基础上，总结了ATS的主要特点。将ATS应用于大量未掺杂和低温MBE SI GaAs的深能级态研究。其中一些结果在先前发表的结果的背景下进行了简要讨论。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文

微信好友朋友圈 QQ好友复制链接

本刊更多论文

Investigation of deep-level states in bulk and low-temperature MBE semi-insulating GaAs by admittance transient spectroscopy

A new modification of DLTS applicable to semi-insulating (SI) materials based on simultaneous capacitance C(t) and ac conductance G(t) transient analysis, Admittance Transient Spectroscopy (ATS), is introduced. Formulas for C(t), G(t), their differential dC(t), dG(t) and correlated Sc(T), SG(T) forms are presented. The most important features of the ATS based on the simulation are summarized. ATS was applied to the investigation of deep-level states in bulk undoped and low temperature MBE SI GaAs. Some of the results are briefly discussed in the context of the previously published ones.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Proceedings of the 7th Conference on Semi-insulating III-V Materials,

自引率

0.00%

发文量